IRFH5306TRPBF IRFH5306 MOSFET transistor
SKU
JD2-007
$0.50
In stock
JD2-007 D2
Categories: Industy & Technologies, Chips & Connectors, Passive & Active
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IRFH5306RPBF
Type Designator: IRFH5306
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 3.6 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 15 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.0081 Ohm
Package: PQFN5X6
This product Pictures is real,new
It's Location: China
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