IRFH5302TRPBF IRFH5302 MOSFET transistor

IRFH5302RPBF 

• Type: n-channel
• Drain-to-Source Breakdown Voltage: 30 V
• Gate-to-Source Voltage, max: ±20 V
• Drain-Source On-State Resistance, max: 2.100 Ohm
• Continuous Drain Current: 100 A
• Total Gate Charge: 29 nC
• Power Dissipation: 100 W
• Package: PQFN 5 X 6 B

You can replace IRFH5302 with IRFH5301, IRFH7004

Location: China

the buyer pays the shipping.