IRFH5010TRPBF IRFH5010 MOSFET transistor
SKU
JD2-006
$0.80
In stock
JD2-006 D2
Categories: Industy & Technologies, Passive & Active
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IRFH5010TRPBF
Type Designator: IRFH5010
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 3.6 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 13 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
Package: PQFN5X6
It's Location; China
The buyer pays shipping
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